HY4008W - 80V 200A N Channel Mosfet - TO247

Product Code: HY4008W

Transistor Type: MOSFET

Control Channel Type: N -Channel

Maximum Power Consumption (Pd): 397 W

Maximum Discharge Source Voltage |Vds|: 80 V

Maximum Gate -Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 200 A

Total Gate Charge (Qg): 195 nC

Rise Time (tr): 18 nS

Drain Source Capacity (Cd): 1029 pF

Maximum Drain Source Open State Resistance (Rds): 0.0035 Ohm